FT150R12KE3B_B5 Transistor IGBT Module N-Channel 1200V 200A 20V Other Brands 620 Kg Packaging Dimension 21

620 Kg Packaging Dimension 21

FP100R12N3T7BPSA1 Trans IGBT Module N-CH 1200V 100A

7 V Continuous Collector Current at 25 C: 1600 A Gate-Emitter Leakage Current: 400 nA Pd – Power Dissipation: 10 kW Minimum Operating Temperature: – 40 C Maximum Operating Temperature: + 150 C Height: 38 mm Length: 140 mm Width: 130 mm Brand: Infineon Technologies Mounting Style: Screw Mount Maximum Gate Emitter Voltage: +/- 20 V Product Type: IGBT Modules Subcategory: IGBTs

Power contactor

5STP26N5800 2650A 5800V ABB Phase Control Thyristor

FT150R12KE3B_B5 Transistor IGBT Module N-Channel 1200V 200A 20V Other Brands 620 Kg Packaging Dimension 21FT150R12KE3B_B5 Transistor IGBT Module N Channel 1200V 200A 20V